Description
choice between metric and imperial units
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og desuden har den indbygget Dali-2
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MDF11N60BTH Transistor - N-MOSFET 600V 11A (TO220F) Elektroknik choice between metric and imperialHjspndings N kanal MOSFET med lav on state modstand og en hurtig tilkobling. Tekniske detaljer: Kanaltype: N Drain strm kontinuerlig maks.: 11 A Drain source spnding: 600 V Drain source modstand maks.: 550 mOhm Maks. trskelspnding for port: 5V Gate source spnding maks.: 30 V, +30 V Hus: TO220F Elektrisk montage: Printhul Benantal: 3 Transistorkonfiguration: Enkelt Kanalform: Enhancement Effektafsttelse maks.: 49 W Operationel temperatur: 55 +150C Tnd
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