IRF740 Transistor - N-MOSFET 400V 5A (TO220) Elektroknik CE615 indbygningsdåse til messingpanel Dimensioner:

Description

CE615 indbygningsdåse til messingpanel Dimensioner: 125 mm (B) x 220 mm (H) x 56 mm (D)

Hvis kableter udsat for direkte sollys

Body material: Zinc alloy

længde 9 - 14 cm Til etablering af GIS installationsvægge Til afstivning af GIS installationsvægge •Indstillelig

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IRF740 Transistor - N-MOSFET 400V 5A (TO220) Elektroknik CE615 indbygningsdåse til messingpanel Dimensioner:Tekniske detaljer: Producent (varemrke): VISHAY Type transistor: N MOSFET Polarisering: unipolr Drain source spnding (Vds): 400V Kontinuerlig drain strm (Id): 6,3A Effektafledning (Pd): 125W Hus: TO220AB Gate source spnding (Vgs): 20V On state modstand (RDS(on)): 550mOhm Montering: Printhul Portopladning: 63nC Type pakke: rr Type kanal: forbedret Specifications: Manufacturer: VISHAY Type of transistor: N MOSFET Polarisation: unipolar Drain source

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